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Figure 3 from Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric
Materials, Free Full-Text
Unconventional vertical current in bottom electrode/200-nm thick
High-performance oxide thin-film diode and its conduction mechanism based on ALD-assisted interface engineering - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D2TC03751C
a) XPS results for TiON film prepared via a single-step sputtering
Figure 3 from Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric
Role of defects on the transparent conducting properties of binary metal oxide thin film electrodes - ScienceDirect
Limitations of Mott-Schottky Analysis for Organic Metal-Insulator-Semiconductor Capacitors
Gate and drain current behavior with variation of structural parameters
On Practical Charge Injection at the Metal/Organic Semiconductor Interface
Demonstrating applicability of the unusual gate current paths as an
Contact properties of a low-resistance aluminum-based electrode with metal capping layers in vertical oxide thin-film transistors - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/D3TC02880A
C-V curves and schematic images for the transport of electron in each
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